19 October 2001 Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444956
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650íµ and 900íµ. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.
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Yinqiang Xu, Yinqiang Xu, Lianhe Li, Lianhe Li, Zhong Pan, Zhong Pan, Yaowang Lin, Yaowang Lin, Qiming Wang, Qiming Wang, } "Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.444956; https://doi.org/10.1117/12.444956
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