19 October 2001 Temperature dependence of gain in multiple-layer quantum dots
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Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.445007
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
The multiple layers quantum dots structure was grown by MBE technology. The temperature dependence of the modal gain of quantum dots was investigated by using the single pass amplified spontaneous emission method. The incorporation of extra layers of quantum dots didn't lead to an increase of the modal loss, inferring that the free carrier absorption in the doped cladding layers might dominate the loss mechanism. The peak modal gain exhibited an increase with temperature in the region of 140K to 200K, presumably due to the non-equilibrium distribution of carriers among the quantum dots.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongqiang Ning, Yongqiang Ning, Xin Gao, Xin Gao, Lijun Wang, Lijun Wang, Peter M. Smowton, Peter M. Smowton, Peter Blood, Peter Blood, } "Temperature dependence of gain in multiple-layer quantum dots", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); doi: 10.1117/12.445007; https://doi.org/10.1117/12.445007
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