18 October 2001 Characterization of high-isolation rf capacitive microswitches
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Proceedings Volume 4586, Wireless and Mobile Communications; (2001) https://doi.org/10.1117/12.445259
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China
Abstract
With the recent growth of microelectromechanical systems (MEMS), RF capacitive microswitches are becoming popular. As such there is a need to accurately characterize the performance of the RF capacitive microswitches. To realize this goal, the paper proposes both electrical and static mechanical models to precisely extract the performance parameters of the RF capacitive microswitches. The electrical model proposed in this paper provides a means to represent the RF capacitive microswitches for use to determine the resistance, capacitance, and inductance. The static mechanical model predicts the effective stiffness constant and the pull-in voltage. Deformation of the bridge and its contact behavior with the dielectric layer are also precisely analyzed using Finite Element Method. Finally this paper discusses the fabrication of the RF capacitive microswitches.
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Chee How Wong, Chee How Wong, M. J. Tan, M. J. Tan, J.-M. Huang, J.-M. Huang, Kim Miao Liew, Kim Miao Liew, Ai Qun Liu, Ai Qun Liu, } "Characterization of high-isolation rf capacitive microswitches", Proc. SPIE 4586, Wireless and Mobile Communications, (18 October 2001); doi: 10.1117/12.445259; https://doi.org/10.1117/12.445259
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