Thin Film Deposition By UV Laser Photolysis

K. Emery; P K Boyer; L R. Thompson; R. Solanki; H Zarnani; G. J Collins

doi:10.1117/12.939428

14 June 1984 Thin Film Deposition By UV Laser Photolysis

K. Emery, P K Boyer, L R. Thompson, R. Solanki, H Zarnani, G. J Collins

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939428
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

An ArF excimer laser was used to photochemically deposit thin films of silicon dioxide, silicon nitride, aluminum oxide and zinc oxide at low temperatures (100-500°C) for microelectronic applications. High depo-sition (>1000 A/Min) rates and conformal step coverage were obtained. The hydrogen bonding, pinhole density, index of refraction, etch rate, and breakdown voltage have been measured for the Si0₂ and silicon nitride films. The effect of substrate temperature and ArF (193 nm) surface photons on the physical, chemical and electrical properties of Si0₂ films have been investigated.

Citation Download Citation

K. Emery, P K Boyer, L R. Thompson, R. Solanki, H Zarnani, and G. J Collins "Thin Film Deposition By UV Laser Photolysis", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939428

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