21 November 2001 Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method
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Abstract
Fluorinated silicon glass (FSG) film prepared by using liquid-phase deposition (LPD) is very potential for use as a smart dielectric owing to its high fluorine concentration (8.6 at %), low dielectric constant (3.46), low stress (43 Mpa), low leakage current density (4.6E-9 A/cm2 at 2 MV/cm) and low deposition temperature (room temperature). By affecting the physicochemical properties and the electrical characteristics will be introduced. Furthermore, the LPD FSG has been applied as gate oxide to MOSFET's and polysilicon TFT's. Owing to its novel property of selective deposition, LPD FSG has been also employed to cap the sidewalls for degradation-free damascene trenches, and to fabricate micro contact holes for the N+/p diodes and the Schottky diodes.
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Ching-Fa Yeh, Ching-Fa Yeh, Tien-Fu Chen, Tien-Fu Chen, Yueh-Chuan Lee, Yueh-Chuan Lee, Chien-Hung Liu, Chien-Hung Liu, Shyue-Shyh Lin, Shyue-Shyh Lin, } "Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448980; https://doi.org/10.1117/12.448980
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