Three-terminal test structure to measure stiction force using I-V data

Enakshi Bhattacharya; Jinbo Kuang; Michael Judy; Jack Martin

doi:10.1117/12.448974

21 November 2001 Three-terminal test structure to measure stiction force using I-V data

Enakshi Bhattacharya; Jinbo Kuang; Michael Judy; Jack Martin

Author Affiliations +

Proceedings Volume 4592, Device and Process Technologies for MEMS and Microelectronics II; (2001) https://doi.org/10.1117/12.448974
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

Stiction is a major failure mechanism during the operation of accelerometers and hence it is important to know the stiction force that the structures encounter during use. We explore the possibility of devising an electrical technique for the direct measurement of in use stiction force. We have designed and fabricated three terminal test structures to measure both vertical and horizontal in use stiction. The measurement is not visual and is based on I-V data with the possibility of automation in the future. The structure consists of cantilever beams of different lengths each with an actuating pad and a detection pad. We measure the pull in voltage applied to the actuating pad, V_PI , required to bring the cantilever beam in contact with the detection pad and the pull out voltage, V_PO, at which the contact is broken. Using the Finite Element tool, ANSYS, a coupled electromechanical model is developed to determine the stiction force from the pull-in and pull-out voltages. We discuss the measurements in terms of the advantages and the shortcomings. We also discuss the sensitivity of the model to various material and geometric parameters and to the accuracy of the measurement.

Citation Download Citation

Enakshi Bhattacharya, Enakshi Bhattacharya, Jinbo Kuang, Jinbo Kuang, Michael Judy, Michael Judy, Jack Martin, Jack Martin, } "Three-terminal test structure to measure stiction force using I-V data", Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448974; https://doi.org/10.1117/12.448974

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