19 November 2001 60Co gamma-irradiation-induced defects in MOCVD n-GaN
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In this paper, we report transient capacitance measurements performed on MOCVD-grown nominally undoped n-GaN Schottky diodes exposed to 60Co gamma irradiation. Three radiation-induced defect levels are identifiable at an accumulated dose of 21 Mrad(Si) with thermal activation energies of 88+/- 7 meV, 104+/- 12 meV and 144+/- 13 meV, produced at a rate of 2.2x10-3 cm-1 per 1.25 MeV photon. The isochronal annealing behavior of these defects indicates that they are of similar nature, stable at temperatures < 100 C and disappear for annealing temperatures > 350 C. The carrier emission and annealing characteristics of these defects are consistent with previously identified nitrogen-vacancy related defects. Three deep-level defects present before irradiation exposure with activation energies of 254, 363 and 586 meV were found to remain unaffected for cumulative gamma-ray doses up to 21 Mrad(Si).
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Gilberto A. Umana-Membreno, Gilberto A. Umana-Membreno, John M. Dell, John M. Dell, Giacinta Parish, Giacinta Parish, Lorenzo Faraone, Lorenzo Faraone, Umesh K. Mishra, Umesh K. Mishra, } "60Co gamma-irradiation-induced defects in MOCVD n-GaN", Proc. SPIE 4593, Design, Characterization, and Packaging for MEMS and Microelectronics II, (19 November 2001); doi: 10.1117/12.448853; https://doi.org/10.1117/12.448853


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