Carrier dynamics in InGaN/GaN multiple quantum well structures

Shih-Wei Feng; Yung-Chen Cheng; Yi-Yin Chung; Ming-Hua Mao; Chih Chung Yang; Yen-Sheng Lin; Kung-Jeng Ma; Jen-Inn Chyi

doi:10.1117/12.446546

29 October 2001 Carrier dynamics in InGaN/GaN multiple quantum well structures

Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Ming-Hua Mao, Chih Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, Jen-Inn Chyi

Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446546
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

We report the fast and slow decay lifetimes of multi- component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape form strongly localized states, effective lifetimes becomes stronger.

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Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Ming-Hua Mao, Chih Chung Yang, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi "Carrier dynamics in InGaN/GaN multiple quantum well structures", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446546

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