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29 October 2001 Carrier dynamics in self-assembled InAs quantum dots
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446588
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
Photoluminescence)PL) spectra and time resolved PL form self-assembled Inas/GaAs quantum dots (QDS) grown by metal organic chemical vapor deposition are studied. A reduction in the emission linewidth with increasing temperature was observed that the variation of PL peak energy with temperature does not follow Varshni's equation. These anomalous behaviors of PL can be explained in terms of thermal redistribution of carriers. It was also found that the PL decay time increases with photon wavelength, which is due to the carrier transfer between laterally coupled QDs.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinhai Zhang, Jian Rong Dong, and Soo-Jin Chua "Carrier dynamics in self-assembled InAs quantum dots", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446588
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