29 October 2001 Defect formation/relaxation processes in Ge-doped SiO2 by ArF laser irradiation
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446558
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
In Ge-doped SiO2 defect centers induced by an ArF laser irradiation are investigated by electron spin resonance (ESR) measurements. Isochronal annealing have been carried out after the irradiation at 77~K in order to observe the formation and the relaxation processes of defects. Thermally induced decay of self-trapped hole (STH) and the formation of so-called 'Ge(2) centers are observed with increasing the temperature. The result suggests that holes are transferred from STH to Ge(2). It is observed that the relative concentration of germanium electron center (GEC) and GeE' do not change in the relaxation process from 210~K to 280~K.
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Makoto Yamaguchi, Makoto Yamaguchi, Kazuya Saito, Kazuya Saito, Akira J. Ikushima, Akira J. Ikushima, } "Defect formation/relaxation processes in Ge-doped SiO2 by ArF laser irradiation", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446558; https://doi.org/10.1117/12.446558
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