29 October 2001 Fictive temperature dependence of photoinduced defects in Ge: SiO2 glass
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446576
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
The relation between the fictive temperature and concentration of electron-trapped centers in Ge-doped silica glass (Ge: SiO2) associated with fourfold coordinated Ge ion (GEC) and GeE' is examined in this study. The fictive temperature of Ge:SiO2, Tf, is determined by monitoring peak positions of 1970 cm-1 and 1870 cm-1 infrared absorption bands. After ArF-laser beam irradiation, ESR spectra of Ge:SiO2 glasses with changing the fictive temperature between 950 and 1250íC were obtained. The concentration of paramagnetic centers increases with increasing Tf. Supposing two kinds of GEC, Ge(1) and Ge(2) depending on the number of nearest-neighbor Ge ions, and GeE' center, ESR spectrum was simulated to estimate the concentration of each paramagnetic center. It has been found that the concentrations of Ge(1) and GeE' increase with increasing Tf, while that of Ge(2) is almost constant.
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Noriaki Horiuchi, Noriaki Horiuchi, Kazuya Saito, Kazuya Saito, Akira J. Ikushima, Akira J. Ikushima, } "Fictive temperature dependence of photoinduced defects in Ge: SiO2 glass", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446576; https://doi.org/10.1117/12.446576
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