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29 October 2001 Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446586
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
Continuous GaN films were grown on the top of cracked Si- doped n+-GaN epilayers by MOCVD techniques. Raman- scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using x-ray diffraction analysis was as low as 0.036 GPA for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Sia, M. S. Hao, Soo-Jin Chua, I. M. Tiginyanu, V. Ichizli, Kabula Mutamba, Hans L. Hartnagel, Ji Zhang, and S. Tripathy "Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446586
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