Growth of ZnSe- and phosphorus-doped ZnSe single crystals

Sankar Narasimhan; K. Ramachandran; C. Sanjeevi Raja

doi:10.1117/12.446577

29 October 2001 Growth of ZnSe- and phosphorus-doped ZnSe single crystals

Sankar Narasimhan, K. Ramachandran, C. Sanjeevi Raja

Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446577
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3. The Hall mobility is measured at room temperature and found to be 510 (cm2 / V.Sec) for pure ZnSe and 340 (cm2 / V.Sec) for doped ZnSe. The variance of mobility with temperature is also measured. The results are compared with the existing data and the advantages of this procedure over the existing experiments are discussed.

Citation Download Citation

Sankar Narasimhan, K. Ramachandran, and C. Sanjeevi Raja "Growth of ZnSe- and phosphorus-doped ZnSe single crystals", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446577

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