29 October 2001 Modeling of sputtered and electron-beam evaporated multilayer ITO/InP solar cells based on efficiency studies
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446579
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
With an energy gap of 1.34 eV, indium phosphide (InP) is an ideal material for solar energy conversion. Much work has been carried out on sputtered indium-tin-oxide (ITO)/InP solar cells but modeling of this structure has long been the subject of debate. The double-layer structure used in this work was originally devised to minimize the surface degradation of InP when exposed to normal heating steps during the fabrication process due to the low congruent temperature of InP. We deposited a thin protective layer of either ITO or indium-tin to protect the front surface of the InP before any heating stages took place. A second layer, ITO, was then deposited to compete the junction. Variation of film deposition conditions, thicknesses and annealing steps worked to improve device performances as well as provide insight into junction mechanisms.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jasmine Henry, Jasmine Henry, John Livingstone, John Livingstone, } "Modeling of sputtered and electron-beam evaporated multilayer ITO/InP solar cells based on efficiency studies", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446579; https://doi.org/10.1117/12.446579
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