29 October 2001 New laser sources for plastic optical fibers: ZnSe-based quantum well and quantum dot laser diodes with 560-nm emission
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001); doi: 10.1117/12.446585
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
The optimization of the active region of ZnSe-based laser diodes for laser emission around a wavelength of 560 nm is reported. Two concepts are presented: quaternary CdZnSSe quantum wells with a high Cd content and CdSe quantum dots. With quantum well devices output powers of more than 1 W are realized. The first electrically pumped CdSe quantum dot laser is presented. The electroluminescence dynamics under current injection of these devices allow lasing operation only in pulsed-mode with pulse widths around 50 ns. Although the threshold current density of the quantum dot laser is around 7 kA/cm(superscript 2, lasing operation can be sustained up to 20 kA/cm(superscript 2 indicating a so far unexpected stability of II-VI material against current injection.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthias Klude, Thorsten Passow, Gabriela Alexe, Heidrun Heinke, Detlef Hommel, "New laser sources for plastic optical fibers: ZnSe-based quantum well and quantum dot laser diodes with 560-nm emission", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446585; https://doi.org/10.1117/12.446585
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KEYWORDS
Quantum wells

Semiconductor lasers

Quantum dots

Quantum dot lasers

Cadmium

Pulsed laser operation

Laser damage threshold

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