Novel silicon-rich SiO2 photoconductor

Gong-Ru Lin; Chin-Chia Hsu

doi:10.1117/12.446556

29 October 2001 Novel silicon-rich SiO₂photoconductor

Gong-Ru Lin, Chin-Chia Hsu

Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446556
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

The photocurrent analysis of a metal-semiconductor-metal photoconductors (MSM-PD) with interdigitated electrodes fabricated on silicon-ion-implanted Borosilicate glass substrate is reported. The dark- and photo-current of the SiO₂:Si⁺ MSM-PD with finger width and spacing of 5 micrometers are 72 pA and 447 pA at bias of 50 volts, which corresponds to a photocurrent gain of 5.2 and a responsivity of 0.38 (mu) A/W as measured under the injection power of 25mW at 514.5 nm. The decreasing trend in photocurrent response versus wavelength reveals that the absorption coefficient of the SiO₂:Si⁺ becomes smaller at longer wavelengths.

Citation Download Citation

Gong-Ru Lin and Chin-Chia Hsu "Novel silicon-rich SiO₂photoconductor", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446556

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