29 October 2001 Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446549
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
We report on optically pumped mid-IR semiconductor lasers that are based on type-II wells. A systematic study of the effect of increasing the In-content in the InxGa1-xSb hole-well suggests that improved hole confinement results in improved power conversion efficiency at elevated temperatures that is also accompanied by a reduction in threshold power and a reduction in T0, the characteristics for threshold.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ron Kaspi, Ron Kaspi, Andrew P. Ongstad, Andrew P. Ongstad, Charles E. Moeller, Charles E. Moeller, Gregory C. Dente, Gregory C. Dente, Michael L. Tilton, Michael L. Tilton, J. Chavez, J. Chavez, Donald M. Gianardi, Donald M. Gianardi, } "Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446549; https://doi.org/10.1117/12.446549
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