29 October 2001 Quality-improved MOCVD GaAs epitaxial layers on Si substrate for photonics applications
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446540
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
GaAs epitaxial layers were grown using MOCVD on oriented Si substrates 2 degrees off towards direction. Growth runs were performed using 2 differential temperature cycles such as 300 degrees C - 950 degrees C and 300 degrees C - 950 degrees C + 750 degrees C - RT - 750 degrees C. Grown samples were characterized using X-ray diffractometer, time resolved photoluminescence (TRPL), Atomic Force Microscopy (AFM) and Photoluminescence (PL). The XRD results show that the G2 growth conditions results in the FWHM of 150 arc-sec. TRPL studies were also show longer minority carrier lifetime of 0.168 ns for G2 grown samples. Improved morphology was observed by AFM. The results were indicating that the G2 growth condition is able to improve the crystalline quality and surface morphology than the G1 growth condition. The substrates were also used further to grow In0.30Ga0.70As quantum dots.
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Periyasamy Thilakan, Periyasamy Thilakan, Chang-Qing Xu, Chang-Qing Xu, } "Quality-improved MOCVD GaAs epitaxial layers on Si substrate for photonics applications", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446540; https://doi.org/10.1117/12.446540
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