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29 October 2001 Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446541
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
In order to achieve controlled degree of intermixing in selected areas (CISA), SiO2 gratings are checked first to be able to influence the degree of intermixing during high-temperature rapid thermal annealing of InGaAs/GaAs quantum wells. Subsequently, SiO2/MgF2 gratings with different periods are used to cover different parts of MWQ sample and found to be suitable for achieving CISA after only a single annealing procedure.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan-Rui Zhao, Julius Yellowhair, Jinhyun Lee, Shuang Zhang, Alex K. Raub, Ronghua Wang, Petros M. Varangis, Abdel-Rahman El-Emawy, Mauro F. Vilela, and Marek Osinski "Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446541
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