29 October 2001 TE-selective GaAs/AlGaAs phase modulator
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Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446574
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
A P-I-i-I-N GaAs/AlGaAs phase modulator with selective phase change only for TE mode is presented. TE-selective phase modulation can be achieved by utilizing the linear electro-optic (LEO) effect, which is polarization-dependent, and limiting contributions from polarization-independent effects. Separate confinement of optical and applied electric fields in the P-I-i-I-N structure and selection of an operating wavelength far from the bandgap enable this operation to be optimized. TE phase shift efficiencies of 4.0 ~ 6.5 degrees/V mm can be achieved with maintaining the ratio of TM to TE phase shift to be less than 10 percent. TE selectivity can be increased at the cost of reduction of phase shift efficiency and vice versa.
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Sang-Sun Lee, Sang-Sun Lee, Sun-Ho Song, Sun-Ho Song, } "TE-selective GaAs/AlGaAs phase modulator", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); doi: 10.1117/12.446574; https://doi.org/10.1117/12.446574
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