Thermal characterization of doped InP using photoacoustic technique

Sajan D. George; Achamma Kurian; Martin Lase; V. P. N. Nampoori; C. P. G. Vallabhan

doi:10.1117/12.446608

29 October 2001 Thermal characterization of doped InP using photoacoustic technique

Sajan D. George, Achamma Kurian, Martin Lase, V. P. N. Nampoori, C. P. G. Vallabhan

Proceedings Volume 4595, Photonic Systems and Applications; (2001) https://doi.org/10.1117/12.446608
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

Citation Download Citation

Sajan D. George, Achamma Kurian, Martin Lase, V. P. N. Nampoori, and C. P. G. Vallabhan "Thermal characterization of doped InP using photoacoustic technique", Proc. SPIE 4595, Photonic Systems and Applications, (29 October 2001); https://doi.org/10.1117/12.446608

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KEYWORDS

Photoacoustic spectroscopy

Semiconductors

Modulation

Signal detection

Iron

Surface finishing

Doping

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