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29 October 2001 Thermal characterization of doped InP using photoacoustic technique
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Proceedings Volume 4595, Photonic Systems and Applications; (2001) https://doi.org/10.1117/12.446608
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sajan D. George, Achamma Kurian, Martin Lase, V. P. N. Nampoori, and C. P. G. Vallabhan "Thermal characterization of doped InP using photoacoustic technique", Proc. SPIE 4595, Photonic Systems and Applications, (29 October 2001); https://doi.org/10.1117/12.446608
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