30 October 2001 Characterization of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapor deposition: applications in integrated optics
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Proceedings Volume 4596, Advanced Photonic Sensors and Applications II; (2001) https://doi.org/10.1117/12.447343
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
In view of applications of SiOxNythin films in MOEMS technology, a study of optomechanical characteristics of this material PECVD deposited are investigated. To optimize the quality of SiOxNy layers we established the relationship between the chemical properties, optical performances and micromechanical stress of deposited films. To use the SiOxNy thin film for the core layer of a channel waveguide, we need to obtain a structure with low optical attenuation, well-controlled refractive index, and low-internal stress. To study the stress characteristics of SiOxNy material we used an interferometric technique, and we fabricated for this purpose special membranes with deposition of variable quality SiOxNy thin films.
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Christophe Gorecki, Christophe Gorecki, Andrei Sabac, Andrei Sabac, Michal Jozwik, Michal Jozwik, Seung Seoup Lee, Seung Seoup Lee, "Characterization of internal stress of silicon oxinitride thin films fabricated by plasma-enhanced chemical vapor deposition: applications in integrated optics", Proc. SPIE 4596, Advanced Photonic Sensors and Applications II, (30 October 2001); doi: 10.1117/12.447343; https://doi.org/10.1117/12.447343
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