30 October 2001 Hybrid mode-locking of a monolithic semiconductor laser on semi-insulating InP substrate
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Proceedings Volume 4598, Photonics Technology in the 21st Century; (2001) https://doi.org/10.1117/12.447103
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
Monolithic colliding pulse mode-locked (CPM) lasers operating at 1.5 +m and 36 GHz repetition frequency were fabricated on semi-insulating substrates. An RF electrical signal at a subharmonic frequency was injected into the saturable absorber at various injected RF power levels, and both the phase noise and timing jitter were characterised. Under fundamental hybrid mode-locking (FH-ML) case, the worst-case timing jitter was reduced from 4.8 ps to 0.69 ps with an injected RF power of +8 dBm. For the second order and third order subharmonic hybrid mode-locking (SH-ML) cases, the timing jitter was reduced to 0.32 ps and 0.45 ps respectively with an injected RF power of +15 dBm. For both the SH-ML cases, the amplitude modulations imposed by the subharmonic driving frequencies were found to be very small.
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Hock Koon Lee, Bocang Qiu, Valentin Loyo-Maldonado, W. K. Tan, A. Catrina Bryce, John H. Marsh, "Hybrid mode-locking of a monolithic semiconductor laser on semi-insulating InP substrate", Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); doi: 10.1117/12.447103; https://doi.org/10.1117/12.447103
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