30 October 2001 Quantum structure far-infrared photodetectors
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Proceedings Volume 4598, Photonics Technology in the 21st Century; (2001) https://doi.org/10.1117/12.447116
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
It is shown that the potential barrier introduced by p delta doping in n-i-n diode not only reduce the dark current but also enhance the responsivity. This was applied to both QWIP and QDIP. The QWIP is made of In0.3Ga0.7As/GaAs multiple quantum wells and the QDIP is made of p type self assembled InAs/GaAs quantum dots. The dark currents are reduced by an order of magnitude at 77K and the detectivities are increased. Thermal activation energies of PL peaks from various QD structures are investigated, which include the effects of barrier height , QD size and barrier materials.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Songcheol C. Hong, Ukhyun Lee, Jinsung Park, Dong-Han Lee, "Quantum structure far-infrared photodetectors", Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); doi: 10.1117/12.447116; https://doi.org/10.1117/12.447116
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