30 October 2001 Ultrafast all-optical switching and demultiplexing using intersubband transitions in InGaAs/AlAsSb quantum well structures
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Proceedings Volume 4598, Photonics Technology in the 21st Century; (2001) https://doi.org/10.1117/12.447104
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
We investigated the intersubband transition in semiconductor quantum wells for ultrafast all-optical switching, proposing the use of InGaAs/AlAsSb coupled double quantum well structures on InP to facilitate intersubband transitions at optical-communication wavelengths, and to reduce the intersubband absorption recovery time from several picoseconds to a few hundred femtoseconds. We obtained high-quality InGaAs/AlAsSb quantum well structures by developing an As-termination technique at the interfaces between quantum wells and barriers, using molecular beam epitaxy. Near-infrared intersubband transitions down to the optical-communication band were realized in InGaAs/AlAsSb single quantum well and coupled double quantum well structures, and picosecond and subpicosecond responses were observed using pump-probe experiments, while optical nonlinearities were estimated from intersubband absorption saturation measurements. Also demonstrated was an all-optical demultiplexing of single signal pulses from 1 Tb/s signal pulse trains at 1.55 um using an InGaAs/AlAsSb coupled double quantum well waveguide. The results indicate that the intersubband transition in this material is very useful for ultrafast all-optical switching.
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Haruhiko Yoshida, Haruhiko Yoshida, } "Ultrafast all-optical switching and demultiplexing using intersubband transitions in InGaAs/AlAsSb quantum well structures", Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); doi: 10.1117/12.447104; https://doi.org/10.1117/12.447104
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