15 October 2001 Design and simulation of a novel piezoresistive accelerometer for high accuracy and overload ability
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Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444673
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
This paper presents the design and simulation of a novel acceleration sensor with high accuracy and overload ability. A super-stable structure with quad-beams , which has highly symmetric structure has been designed, and this help to eliminate the errors caused by the change of the dimensions and position of the piezoresistors in structure. At the same time, this structure induces films between the beams to reduce the cross-axis sensitivity. Some holes are made in the films to reduce the vertical rigidity. Thus, the films have little effect on the sensitivity. Besides, the sandwich structure is adopted In this device , the damping of the device is controlled by adjusting the clearances between the caps and the seismic mass ,which can obtain the large bandwidth and good frequency response. The bumps are made on two caps to get high overload ability. The piezoresistors are covered with metal layer to improve the electric performance. The structure made beneficial to the high resolution, low cross-axis sensitivity, high overload and good electric performance of the device.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Zhang, Wei Zhang, Xinping Cao, Xinping Cao, Bei Liu, Bei Liu, Dacheng Zhang, Dacheng Zhang, } "Design and simulation of a novel piezoresistive accelerometer for high accuracy and overload ability", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444673; https://doi.org/10.1117/12.444673

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