15 October 2001 Preparations of Zr-rich PZT thin film on YBCO electrode and investigation of ferroelectric properties
Author Affiliations +
Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444671
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Pb(ZrxTi1-x)O3(PZT) films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films by pulsed laser deposition (PLD). A pulsed 3321 mbar KrF excimer laser was used to ablate the bulk targets. In this work, sintered targets of Pb(Zr0.94Ti0.06)O3 is used to deposit ferroelectric film onto YBCO and LAO underlayers at 570 degrees Celsius. The X-ray diffraction (XRD) pattern shows that the PZT film is of the perovskite structure having the remarkable (00k) orientation. The polarization-voltage (P-V) characteristic of the PZT thin film is measured by the Virtual Ground Mode. The remnant polarization and coercive field have been found to be Pr equals 4.7 (mu) C cm-2 and Vc equals 0.4 V for Pt/YBCO/PZT/ALO.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Runling Peng, Runling Peng, Ping Wu, Ping Wu, } "Preparations of Zr-rich PZT thin film on YBCO electrode and investigation of ferroelectric properties", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444671; https://doi.org/10.1117/12.444671
PROCEEDINGS
4 PAGES


SHARE
Back to Top