15 October 2001 Transmissive properties of Zr02/Si02 photonic band gap materials
Author Affiliations +
Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444679
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
We present results of transmittance measurements on periodic layers of ZrO2/SiO2 at optical frequencies. These one- dimensional photonic band gap materials exhibit transparency bands and a huge stop band at optical frequencies. A unique feature of these dielectric/dielectric photonic band gap (MM- PBG) materials is that the overall reflectance in the stop band may increase as more periods are deposited. The center frequency and width of the stop bands are adjustable and generally depend on the thickness of the layers and the number of ZrO2/SiO2 periods. These simple periodic structures have applications as microcavity reflector in microcavity lasers.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaodong He, Xingyuan Liu, Dali Liu, and Rongjin Yu "Transmissive properties of Zr02/Si02 photonic band gap materials", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); doi: 10.1117/12.444679; https://doi.org/10.1117/12.444679

Back to Top