15 October 2001 Capacitive humidity sensor in CMOS technology
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444724
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xian-Wei Yan, Ming Qin, Qing-An Huang, "Capacitive humidity sensor in CMOS technology", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444724; https://doi.org/10.1117/12.444724
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