Capacitive humidity sensor in CMOS technology

Xian-Wei Yan; Ming Qin; Qing-An Huang

doi:10.1117/12.444724

15 October 2001 Capacitive humidity sensor in CMOS technology

Xian-Wei Yan; Ming Qin; Qing-An Huang

Author Affiliations +

Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444724
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.

Citation Download Citation

Xian-Wei Yan, Xian-Wei Yan, Ming Qin, Ming Qin, Qing-An Huang, Qing-An Huang, } "Capacitive humidity sensor in CMOS technology", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444724; https://doi.org/10.1117/12.444724

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