15 October 2001 Characterization and MEMS application of sputtered TiNi shape memory alloy thin films
Author Affiliations +
Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444686
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Shape memory alloys (SMAs) offer a unique combination of novel properties, which promise some exciting application potentials in micor-electro-mechanical systems (MEMS), medical implants, intelligent materials and structural systems. In this study, TiNi films with different compositions were successfully prepared by mix sputtering of TiNi and Ti targets using a magnetron sputtering equipment. Microstructure and crystalline phases were analyzed by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Residual stress and phase transformation properties of the TiNi films were investigated using curvature measurement and differential scanning calorimeter (DSC). Effects of the deposition parameters on the film composition, phase transformation and shape-memory effects were analyzed. DSC, XRD and curvature measurement revealed clearly the martensitic transformation of the deposited TiNi films. Measurement of substrate curvatures as a function of temperature gave the information of crystallization and transformation temperatures, recoverable stress, thermal stress, intrinsic stress and the martensitic yield stress for the two types of SMA films. By depositing TiNi films on the bulk micromachined Si cantilever structures, micro-beams exhibiting a good shape-memory effect were obtained.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hejun Du, Hejun Du, Yongqing Fu, Yongqing Fu, } "Characterization and MEMS application of sputtered TiNi shape memory alloy thin films", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444686; https://doi.org/10.1117/12.444686

Back to Top