15 October 2001 Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444695
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.
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Yanfeng Jiang, Yanfeng Jiang, Qing-An Huang, Qing-An Huang, } "Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444695; https://doi.org/10.1117/12.444695
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