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15 October 2001 Metallic oxide semiconductor field effect-transistor array-compound-type gas chemical microsensor
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444688
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Metallic Oxide Semiconductor Field Effecttransistor (MOSFET) array compound type gas chemical microsensor has been developed. The device consists of three MOSFETs, a heating resistor and a diode used as temperature sensor. Two of the MOSFETs have their gates covered with thin catalytic and sensitive materials: Palladium (Pd) and Yttria-Stabilized Zirconia (YSZ) and act as hydrogen and oxygen sensitive units respectively. The third MOSFET has a standard gate covered with aluminium and acts as a reference. This paper discusses the structure, working principle and fabrication process of the device. In addition, some relevant experimental curves are presented. Analysis of characteristics of the device, such as sensitivity, stability, selectivity, temperature property and time response, has been performed. Obtained results show that the exposure to different gases causes the change of threshold voltage of each gas sensitive MOSFET. They also exhibit excellent characteristics of the device.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huang-ping Yan, Jun Guo, and Yong-jian Feng "Metallic oxide semiconductor field effect-transistor array-compound-type gas chemical microsensor", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444688
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