15 October 2001 Numerical modeling of a SiN beam resonant pressure sensor
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444702
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Numerical modeling of a SiN beam resonant pressure sensor is presented. The SiN beam is electrothermally excited and sensed by a piezoresistive thin film detector. In order to predict its exact performance and to optimize the design, the commercial FEA software is used to analyze the SiN beam resonant pressure sensor. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor has been fabricated using porous silicon sacrificial layer technology and measured both in vacuum and in air. There is a satisfactory agreement between computer simulation and experimental results.
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Deyong Chen, Deyong Chen, Dafu Cui, Dafu Cui, Li Wang, Li Wang, Zhongyao Yu, Zhongyao Yu, } "Numerical modeling of a SiN beam resonant pressure sensor", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444702; https://doi.org/10.1117/12.444702
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