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15 October 2001 Polysilicon micromachined switch
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444756
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
LPCVD SiO2 and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RF switch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending. The switch offers the potential for building a new fully monolithic integrated RF MEMS for radar and communications applications.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhengyuan Zhang, Zhiyu Wen, Shilu Xu, Kaicheng Li, Zhengfan Zhang, and Shanglian Huang "Polysilicon micromachined switch", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444756
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