15 October 2001 Wheastone-bridge-type MR sensors of Si(001)/NiO(300 Å)/NiFe bilayer system
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Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444738
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Great interest is given in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO(300A)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300A)/NiFe(450A) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45 degree(s) Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300A)/NiFe(450A) was shown in the range of about +/- 50 Oe.
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Jae Sung Song, Jae Sung Song, Won Jae Lee, Won Jae Lee, Bok Ki Min, Bok Ki Min, Gwiy-Sang Chung, Gwiy-Sang Chung, } "Wheastone-bridge-type MR sensors of Si(001)/NiO(300 Å)/NiFe bilayer system", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); doi: 10.1117/12.444738; https://doi.org/10.1117/12.444738
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