16 October 2001 Effect of the carbon energy on the growth of silicon carbide films by pulsed laser deposition
Author Affiliations +
Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001); doi: 10.1117/12.445730
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Pulse laser ablating graphite is adopted to deposit SiC films on Si(111) under different laser fluence and substrate temperature. Experiment results show that the deposited films present different morphology and X-ray diffraction characteristics. Single crystalline SiC is obtained when the laser fluence is 10J/cm2 and the deposition temperature is 900 degree(s)C. At lower laser fluence or lower substrate temperature, a carbon overlayer is formed. Meanwhile the surface roughness of the films becomes relative smooth and the deposition rate increase with laser fluence. The stress accumulation during film growth releases gradually as the substrate temperature increase. The mechanism of the crystalline SiC formation in the initial stage that the energetic carbon species penetrate several layers below the silicon surface by subplantation and transversely migration in silicon substrate is discussed. All the results suggest that the energy of incident atom play an important role in growth silicon carbon at low substrate temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Yu, Zhi-yuan Zheng, Li Han, Guangsheng Fu, "Effect of the carbon energy on the growth of silicon carbide films by pulsed laser deposition", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445730; https://doi.org/10.1117/12.445730
PROCEEDINGS
4 PAGES


SHARE
Back to Top