16 October 2001 Farfield characteristics of InGaAs/GaAs quantum dot laser
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445712
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
The farfield characteristics of a InGaAs/GaAs quantum dots laser was investigated. It was found that the farfield picture on the screen in front of the laser was composed of two straight lines due to the side modes of the junction. And the straight lines consisted of three bright spots, which we believe were presumably originated from the feedback of the substrate and the capping layer.
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Yongqiang Ning, Yongqiang Ning, Xin Gao, Xin Gao, Lijun Wang, Lijun Wang, Peter M. Smowton, Peter M. Smowton, Peter Blood, Peter Blood, } "Farfield characteristics of InGaAs/GaAs quantum dot laser", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445712; https://doi.org/10.1117/12.445712
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