16 October 2001 Integration of CMOS process-compatible optoelectronic interconnects for high-speed communications
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445717
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
The design and integration of a fully embedded Si-CMOS process-compatible optical interconnects are presented. The transmitting and receiving functions will be incorporated within the embedded optoelectronic interconnection layers of 3-D integrated multilayer boards and ASICs. All elements including waveguide, coupler, detector and laser for the fully embedded board-level optical interconnection system are developed. The propagation loss of waveguide is 0.58 dB/cm at 632.8 nm and 0.21 dB/cm at 850 nm. The 45-degree TIR (total internal reflection) micro-mirror couplers with high coupling efficiencies are formed by reactive ion etching. The MSM (metal-semiconductor-metal) photo-detector array is fabricated on a GaAs wafer by a CMOS compatible technique. The external quantum efficiency of 0.4 A/W and 3 dB bandwidth of the integrated MSM photo-detector of 2.648 GHz are experimentally confirmed. The VCSEL array with a sacrificial layer for the epitaxial liftoff of VCSEL from the GaAs substrate is designed and manufactured. A 1 X 12 array of VCSELs, MSM photo- detectors and polyimide channel waveguides via 45-degree TIR micro-couplers are integrated on Si wafer. The experimental performances of the highly integrated system are given.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ray T. Chen, Ray T. Chen, Xuping Zhang, Xuping Zhang, Yujie Liu, Yujie Liu, Lei Lin, Lei Lin, G. Choi, G. Choi, "Integration of CMOS process-compatible optoelectronic interconnects for high-speed communications", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445717; https://doi.org/10.1117/12.445717

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