16 October 2001 Intensity-modulating characteristics of a laser diode subject to optical injection
Author Affiliations +
Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445713
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
We have found that the optical power of a laser diode does not change with the injected light intensity that is modulated when its injection current is at some specified values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through the theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on the longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it get easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangzhao Wang, Xiangzhao Wang, Hongbin Lu, Hongbin Lu, Xuefeng Wang, Xuefeng Wang, Feng Qian, Feng Qian, Danyang Yu, Danyang Yu, Zujie Fang, Zujie Fang, } "Intensity-modulating characteristics of a laser diode subject to optical injection", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445713; https://doi.org/10.1117/12.445713
PROCEEDINGS
4 PAGES


SHARE
Back to Top