16 October 2001 Low-frequency terminal electrical noise of high-power quantum well lasers and facet stability
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445715
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
We present a novel, non-destructive technique which the low- frequency terminal electrical noise (TEN) is used to study facet stability of semiconductor lasers. We do different treatments for the facet and measure the changes of TEN before and after treatments. The results indicate that TEN level at low injection shows facet stability and can be used to predict facet stability of the device.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guijun Hu, Jiawei Shi, Sumei Zhang, Fenggang Zhang, "Low-frequency terminal electrical noise of high-power quantum well lasers and facet stability", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445715; https://doi.org/10.1117/12.445715
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