16 October 2001 Modeling of GaAs photoconductive switches
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445696
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
This research has focused on modeling of optically triggered, high gain nonlinear GaAs switches. A complete model with dynamics of deep level trap, carries, direct band-gap recombination radiation and heat involved has been constructed. The various generation and recombination mechanism have been discussed and presented. Photo-ionization, thermal emission of deep level traps, intrinsic impact ionization, standard Shockley-Read-Hall recombination, direct band-gap recombination and Auger recombination have been considered.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tongyi Zhang, Tongyi Zhang, Shunxiang Shi, Shunxiang Shi, Renxi Gong, Renxi Gong, Yanling Sun, Yanling Sun, } "Modeling of GaAs photoconductive switches", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445696; https://doi.org/10.1117/12.445696
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