16 October 2001 Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445754
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Photoelectronic characteristics of the fabricated InxGa1-xAs/AlyGa1- yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength (3 to approximately 5 micrometers ) infrared detectors are studied. The components display photovoltaic-type photocurrent response as well as the bias- controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3 to approximately 5.3 micrometers infrared atmospheric transmission window. The blackbody detectivity (Dbb*) of the detectors reaches to about 1.0 X 1010 cm(DOT)Hz1/2/W at 77 K under bias of +/- 7 V. By expanding the electron wave function in terms of normalized plane wave basis withn the framwork of the effective-mass envelope-function theory, the linear Stark effects of the intersubband tansitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements.
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Wen-Gang Wu, Wen-Gang Wu, Zhibin Chen, Zhibin Chen, } "Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445754; https://doi.org/10.1117/12.445754
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