16 October 2001 Pulsed laser deposition of crystalline carbon nitride thin films at high substrate temperature
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445729
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Crystalline carbon nitride thin films are synthesized by pulsed XeCl excimer laser deposition technique following by a high temperature annealing or accompanying a pulsed glow discharge plasma assistance. The composition, the structure and the binding state of the deposited films are analyzed by several techniques such as Scanning electron microscopy, Energy-disperse X-ray (EDX), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Experiment results show that the crystalline carbon nitride films preferentially formed at high temperature companying with the nitrogen content reduction and the films graphitization, combining high substrate temperature and nitrogen activation through pulsed discharge is favorable for the formation of (alpha) -C3N4 crystallites.
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Guangsheng Fu, Guangsheng Fu, Wei Yu, Wei Yu, Shu-Fang Wang, Shu-Fang Wang, Lianshui Zhang, Lianshui Zhang, Xiao-Wei Li, Xiao-Wei Li, } "Pulsed laser deposition of crystalline carbon nitride thin films at high substrate temperature", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445729; https://doi.org/10.1117/12.445729
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