16 October 2001 Spectral analysis of photoeffect induced by electrical field in ITO layers on glass substrate
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Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445747
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
The thin transparent and conductive ITO layers have been deposited onto the both surface of the glass of dimensions 0.2 X 16 X 16 mm using the DC ion sputtering method. In order to study the electron emission the voltage has been applied between the both ITO layers. One of the layer was 1 micrometer thick (field electrode) and another one (10 divided by 200 nm) at opposites surface of the glass surface was treated as the electron emitter. The negative biasing voltage has been applied to the field electrode. The studies has been carried out in vacuum (10-7 hPa). The multichannel analyzer of amplitude of voltage pulses created by the electron multiplier has been used in order to record the electron emission yield. The pulses are recorded in channels of the pulse analyzer according to their height creating so-called voltage pulse amplitude spectrum. Aside of the effects the studies concerning the result of UV illumination on the photoemission monitored by field has been examined. With increasing of biasing voltage (0 divided by -2 kV) and after illumination the count frequency of pulses grows monotonically. The shape of obtained curves of the spectral dependence of the photoelectron emission yield was found to be independent of the excitation wavelength. However, the surface under the experimental curves were found to be different and the maximal one appeared to be for the wavelength corresponding approximately for the value of the energy gap of ITO (3.5 eV).
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Jadwiga Olesik, Jadwiga Olesik, Zygmunt Olesik, Zygmunt Olesik, Michal Janusz Malachowski, Michal Janusz Malachowski, Andrzej Kosmala, Andrzej Kosmala, } "Spectral analysis of photoeffect induced by electrical field in ITO layers on glass substrate", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); doi: 10.1117/12.445747; https://doi.org/10.1117/12.445747

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