Temperature effect of the a-C:H gate pH-ISFET

Jung Chuan Chou; Hsjian-Ming Tsai

doi:10.1117/12.445745

16 October 2001 Temperature effect of the a-C:H gate pH-ISFET

Jung Chuan Chou, Hsjian-Ming Tsai

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445745
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

In the pH-ISFET (ion sensitive field effect transistor) applications, the temperature is one of the important factors for the stability. The hydrogenated amorphous carbon (a-C:H) films is used for the sensitive layer of the pH-ISFET. The a- C:H pH-ISFET device is prepared by the plasma-enhanced low pressure chemical vapor deposition (PE-LPCVD). The thickness of the a-C:H was 2000 Angstrom, and the a-C:H gate pH-ISFET was encapsulated by epoxy. The Keithley 236 instrument was used to measure the I_DS - V_GS curves of the a-C:H gate pH-ISFET in the various pH buffer solutions at 15 degree(s)C - 55 degree(s)C. According to the experimental results, we found the sensitivity of the a-C:H gate pH-ISFET is increased with the temperature. Finally, the TCS (temperature coefficient of sensitivity) can also be calculated.

Citation Download Citation

Jung Chuan Chou and Hsjian-Ming Tsai "Temperature effect of the a-C:H gate pH-ISFET", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445745

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