5 February 2002 II-VI compounds wide-band barrier detectors of He-Ne laser
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Proceedings Volume 4607, Selected Papers from Fifth International Conference on Correlation Optics; (2002); doi: 10.1117/12.455211
Event: Fifth International Conference on Correlation Optics, 2001, Chernivsti, Ukraine
Abstract
The basic parameters and characteristics of surface barrier and heterojunction photodiodes that contain a layer of cadmium telluride with an isovalent impurity are examined. The role of the isovalent impurity in the magnification of the temperature and radiant resistance of the detectors is analyzed.
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V. P. Makhniy, V. E. Baranjuk, Mikhail M. Slyotov, O. V. Stets, "II-VI compounds wide-band barrier detectors of He-Ne laser", Proc. SPIE 4607, Selected Papers from Fifth International Conference on Correlation Optics, (5 February 2002); doi: 10.1117/12.455211; https://doi.org/10.1117/12.455211
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KEYWORDS
Cadmium

Sensors

Diodes

Heterojunctions

Photodiodes

Semiconductors

Resistance

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