5 February 2002 II-VI compounds wide-band barrier detectors of He-Ne laser
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Proceedings Volume 4607, Selected Papers from Fifth International Conference on Correlation Optics; (2002) https://doi.org/10.1117/12.455211
Event: Fifth International Conference on Correlation Optics, 2001, Chernivsti, Ukraine
Abstract
The basic parameters and characteristics of surface barrier and heterojunction photodiodes that contain a layer of cadmium telluride with an isovalent impurity are examined. The role of the isovalent impurity in the magnification of the temperature and radiant resistance of the detectors is analyzed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Makhniy, V. P. Makhniy, V. E. Baranjuk, V. E. Baranjuk, Mikhail M. Slyotov, Mikhail M. Slyotov, O. V. Stets, O. V. Stets, } "II-VI compounds wide-band barrier detectors of He-Ne laser", Proc. SPIE 4607, Selected Papers from Fifth International Conference on Correlation Optics, (5 February 2002); doi: 10.1117/12.455211; https://doi.org/10.1117/12.455211
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