Interaction of excitons with optical phonons in layer crystals

Bohdan M. Nitsovich; C. Yu. Zenkova; N. K. Kramar

doi:10.1117/12.455210

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5 February 2002 Interaction of excitons with optical phonons in layer crystals

Bohdan M. Nitsovich; C. Yu. Zenkova; N. K. Kramar

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Proceedings Volume 4607, Selected Papers from Fifth International Conference on Correlation Optics; (2002) https://doi.org/10.1117/12.455210
Event: Fifth International Conference on Correlation Optics, 2001, Chernivsti, Ukraine

Abstract

The investigation is concerned with layer crystals of the GaSe, InSe, GaTe, MoS₂-type and other inorganic semiconductors, whose phonon spectrum has a great number of peculiarities, among them the availability of low-energy optical phonons. In this case the dispersion of these phonons can be essential and vary in character. The mass operator of the exciton-phonon system and the light absorption coefficient for different dispersion laws of optical phonons have been calculated. The influence of the sign of the phonon 'effective mass' on the exciton absorption band of layer crystals, which causes the opposite in sign dynamics of the absorption maximum shift, and the change of the absorption curve asymmetry have been determined.

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Bohdan M. Nitsovich, C. Yu. Zenkova, and N. K. Kramar "Interaction of excitons with optical phonons in layer crystals", Proc. SPIE 4607, Selected Papers from Fifth International Conference on Correlation Optics, (5 February 2002); https://doi.org/10.1117/12.455210

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