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5 February 2002 Interaction of excitons with optical phonons in layer crystals
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Proceedings Volume 4607, Selected Papers from Fifth International Conference on Correlation Optics; (2002) https://doi.org/10.1117/12.455210
Event: Fifth International Conference on Correlation Optics, 2001, Chernivsti, Ukraine
Abstract
The investigation is concerned with layer crystals of the GaSe, InSe, GaTe, MoS2-type and other inorganic semiconductors, whose phonon spectrum has a great number of peculiarities, among them the availability of low-energy optical phonons. In this case the dispersion of these phonons can be essential and vary in character. The mass operator of the exciton-phonon system and the light absorption coefficient for different dispersion laws of optical phonons have been calculated. The influence of the sign of the phonon 'effective mass' on the exciton absorption band of layer crystals, which causes the opposite in sign dynamics of the absorption maximum shift, and the change of the absorption curve asymmetry have been determined.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bohdan M. Nitsovich, C. Yu. Zenkova, and N. K. Kramar "Interaction of excitons with optical phonons in layer crystals", Proc. SPIE 4607, Selected Papers from Fifth International Conference on Correlation Optics, (5 February 2002); https://doi.org/10.1117/12.455210
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